| 摘要 |
PURPOSE: To reduce a shaving amount due to the etching of a semiconductor substrate in the bottom of a contact hole formed by an SAC technique. CONSTITUTION: Under a condition that the etching selectivity ratio of silicon oxide films 21, 22, 23 to an insulating film 11 becomes large, the films 21, 22, 23 are dry-etched. After that, the condition is changed to a condition that the etching selection ratio of the insulating film 11 to the films 21, 22, 23 becomes large, and the insulating film 11 is etched by a prescribed amount.
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