| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a thin-film transistor that stabilizes characteristics in a gate insulating film, and has less variation in off-current (electrical characteristics). SOLUTION: This method is used for manufacturing the thin-film transistor, having the gate insulating film containing silicon on an active layer, and has a gate insulating film formation process for forming the gate insulating film by decomposing, using plasma, which is a mixed gas containing the gas of a silicon source in a reaction container. The partial pressure of the gas of the silicon source in the start of plasma discharge in the gate insulating film formation process should be smaller than that of the gas of the silicon source, when plasma discharge is stable, and at the same time, is larger than zero.
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