| 摘要 |
PURPOSE:To enable the formation of a bump due to electrolytic plating in a step of forming the bump electrode of an N-P-N type punch through element by forming a shortcircuit electrode between the N type layer and the P type layer formed with the bumps, thereby facilitating the energization. CONSTITUTION:In a step of manufacturing a punch through constant voltage element, a P type layer 20 and an N<+> type layer 19 are formed on an N<+> type substrate 21, and the layers 19, 20 forming the bump are shortcircuitted with deposited metallic films 7a, 7b. Then, the back surface and the side surface of the substrate 21 are covered with wax 14, an N<+> type layer 21 is connected to a powr source 13, is then dipped in plating liquid 11, plating voltage is applied between the layer and an Ag electrode 12, and a bump is formed between the metallic films 7a and 7b. Then, the substrate 21 is scribed along the region 5, for example, as a DHD type element. Thus, the plating current can be energized through the layer 20, thereby readily forming the uniform bump electrode, and the constant voltage element of low temperature coefficient can be, for example, formed in small size inexpensively. |
