| 摘要 |
PURPOSE:To remove difference in stages generated by the wiring conductor of the first layer, and to improve the reliability of multilayer wiring by burying an insulator film with thickness in the same extent as the conductor wiring of the first layer into sections except the conductor wiring. CONSTITUTION:The Al wiring pattern 3 is formed onto an insulating layer 2 with a contact hole on a semiconductor substrate 1 through etching while using a photo-resist 4 as a mask. The silicon dioxide insulating layer 5 is evaporated onto the whole surface containing the photo-resist 4 in thickness in the same extent as the Al wiring layer 3. The photo-resist 4 is removed, and the wiring layer 3 is shaped in a flat surface. The multilayer wiring can be formed by similarly shaping an insulating layer 6, a conductor 7 and the second layer Al wiring 8 onto the wiring layer 3. |
