MANUFACTURE OF SEMICONDUCTOR LIGHT EMISSION DEVICE

摘要

PURPOSE:To contrive the stabilization of transverse mode and reduction of threshold current, by appropriately selecting the groove direction and etching liquid on a semiconductor laser manufacturing substrate. CONSTITUTION:An InP substrate is applied for etching by etching liquid with the mixture of hydrochloric acid and nitric acid in the ratio of 1:1-2:3 with the surface (100) as a main surface and sides of the opening part of the groove in parallel in the direction of <011> in the manufacture of InGaAsP semiconductor laser of a burried type with double hetero structure in the groove of the semiconductor substrate. Figures (a) and (b) change (c) when unsufficient etching.