| 摘要 |
PURPOSE:To contrive to enhance resolving property, to reduce pin holes, and to enhance precision of pattern of a resist pattern by a method wherein after a negative type resist film is exposed, the film is dipped in an organic solvent before the development treatment is performed. CONSTITUTION:After the negative type resist film is exposed and before the development treatment is to be performed, the film thereof is dipt in the organic solvent to generate no dissolution of the resist, or no extreme swelling and no degeneration of the resist, and the organic solvent thereof is made to be diffused in the resist film. Accordingly enhancement of resolving property to be caused by reduction of swelling of the resist pattern, reduction of the pin holes to be caused by reduction of the molten material of component deposited from the resist pattern and being not reacted, and enhancement of precision of pattern can be attained in the following development treatment. Besides at this case, it is desirable to use a chloromethyl compound of polystyrene or a chloromethyl compound of poly alpha-methylstyrene for the negative type resist, and to use alcohol having 1-4 carbons for the organic solvent. |
