| 摘要 |
PURPOSE:To reduce the forward voltage drop as well as to eliminate the decrease in the withstand pressurizing force for the title semiconductor device by a method wherein a semiconductor substrate and an electrode are adhered using the solder material consisting of Al, containing Cu of specified composition ratio or below, Cu or Al, Cu and Si. CONSTITUTION:An Al layer is evaporated on both sides of the Si substrate 1 with P, N and N<+> conductive layers la-lc. On the other hand, a Cu layer is evapor-deposited on an Mo plate 2 which is one of supporting electrodes, and a heat treatment is performed. The above two layers are set so that the Al layer on the layer lc and the Cu layer on the Mo plate 2 will be contacted each other, and a soldering work and a heat treatment are performed. As for the composition ratio of the Al and the Cu for the soldering material 3, the Al layer r and the Cu layer are adjusted so that Cu is 32 atom % or less with the remnant of Al will be obtained. Accordingly, a low forward voltage drop and a large withstand pressurizing force can be obtained. Above-mentioned effect will be obtained even when the Alis replaced with Al-Si alloy. |
