| 摘要 |
PURPOSE:To contrive to enlarge quantity of reflected electrons and to enhance the S/N ratio of a semiconductor device by a method wherein the prescribed figure is formed on a semiconductor substrate with a material of high melting point containing a high melting point material, and the figure thereof is scanned with the electron beam to perform positioning afterwards. CONSTITUTION:After an oxide film 7 is formed on the Si substrate, an MoSi2 film, for example, is formed as the film containing the high melting point metal. The film thereof is the film having the melting point being the maximum treatment temperature or more, the melting point of 200 deg.C or more, for example. Then the figure for positioning consisting of the film thereof is formed. After then, scanning of the figure is performed with the electron beam, and positioning is performed by detecting the reflected electrons therefrom. Because a transition metal of high melting point metal, etc., exhibits large quantity of reflected electrons as compared with Si generally, even when unevenness is generated on the film 7 at the neighborhood of the figure 8, the waveform of reflected electrons to be detected receives no influence therefrom completely. Moreover because no protection is needed when etching of the figure 8 is to be performed, curtailment of exposing hours can be attained. |
