| 摘要 |
PURPOSE:To prevent the disconnection of wiring for the title semiconductor device by a method wherein the surface protecting film is formed into a convex shape towards the internal wiring. CONSTITUTION:In the surface protecting film 10, shown by the broken line in the diagram, the section located above the electrode 12 of a pellet 11 is removed, and at the same time, the film 10 is removed in a convex shape towards the internal wiring. With the above-mentioned structure, the inpulse given to the protecting film due to the pressure bonding of a bonding wire 13 becomes small, and this enables to prevent the disconnection of wirings. Further, the punching out size of the convex shape is small as compared with the entire protecting area of the protective film 12, thereby the purpose of surface protection can be attained. |
