| 摘要 |
PURPOSE:To enable to dissolve the problems of dependence property on wavelength, dependence property on pulse duration at the respective layers of a semiconductor substrate when laser annealing of the semiconductor substrate is to be performed by a method wherein plural kinds of optical beams are mixed and irradiaed selectively. CONSTITUTION:The laser beams radiated from the optical radiating parts LA, LB, LC, LD are the properly selected beams of the beam having different wavelength, the Q-switched laser beam or the continuous wave laser beam, the beam having different pulse duration, etc. ON.OFF of the laser beams thereof are also properly selected. The laser beams thereof are reflected by mirrors MA- MD, and are condensed at one point on the substrate S. The substrate S is transferred in the X-Y directions, and annealing is performed by scanning. |
