发明名称 PREPARATION OF SILICON CARBIDE BY AQUEOUS SOLUTION METHOD
摘要 PURPOSE:To prepare microcrystalline SiC at a low temperature, by reacting a compound containing a CN group with silicic acid ions in an aqueous solution of an alkali while converting the existing metallic ions to ions having a large oxidation number electrochemically. CONSTITUTION:A compound having a CN group, e.g. (CN)2, HCN, KCN, NaCN, CaCN or a cyano complex compound, HSCN and a salt thereof, an organic cyano compound or a compound capable of forming these compounds in an aqueous solution of an alkali, is reacted with silicic acid ions, e.g. SiO2, capable of forming the silicic acid ions in an aqueous solution of an alkali while converting the existing metallic ions of a transition metal containing the iron family into metallic ions having a large oxidation number by applying an adequate voltage thereto with electrodes provided in the solution. The reaction proceeds at room temperature -about 110 deg.C under ordinary pressure at a pH >=about 9.
申请公布号 JPS57183314(A) 申请公布日期 1982.11.11
申请号 JP19810069082 申请日期 1981.05.08
申请人 KAGAKU GIJIYUTSUCHIYOU MUKIZAISHITSU KENKYUSHO 发明人 INOMATA KICHIZOU;NAKAMURA MASAMI
分类号 C01B31/36 主分类号 C01B31/36
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