| 摘要 |
PURPOSE:To obtain stable light emission characteristics by keeping the value NA/ND within the specified range where NA means density of accepter of a p type epitaxial gowth layer and ND means density of doner of an n type epitaxial growth layer. CONSTITUTION:An n type layer, for instance an n type GaxAl1-xAs layer 2 doped by tellurium, and a p type layer, for instance a p type GayAl1-yAs layer 3 doped by Zn are formed on an n type GaAs single crystal substrate 1. As shown in Figure, in both cases when density of doner ND is 5X10<16>cm<-3> and 2X 10<17>cm<-3>, the emission power takes the maximum value when NA/ND is approximately 2-4. Moreover, even NA/ND varies within the range of 1.5-10, there is not problem practically and the stable light emission characterisics can be obtained. |
