| 摘要 |
PURPOSE:To eliminate the whiskers generated in the wiring preventing the wirings from shortcircuiting by a method wherein, when a metallic wiring is formed on the semiconductor wafer including a device making use of Al or Al alloy, the impurity ion such as Ar, P, As, Sb and the like is implanted after forming the metallic wiring. CONSTITUTION:The Al wiring with the high purity as the first layer is formed on the semiconductor wafer including a device by means of the sputtering deposition while the impurity ion such as Ar<+>, P<+>, As<+>, Sb<+> and the like is implated in the Al wiring. Next, the Al wiring is photographically etched removing the resist film used during the etching to provide the interlayer insulating film. Then the Al wiring as the first layer is coated with the Al wiring as the second layer by means of performing the specified throughholes and the sputtering evaporation and the ion is further implanted in the second layer while the similar procedures are repeated forming the multilayered Al wirings. Through these precedures, the whiskers generated in case of forming the wiring may be removed increasing the yield of the device and improviding the reliability thereof. |
