| 摘要 |
<p>Method for converting a multilayer semiconductor structure (20), that includes active semiconductor regions (22) interposed between semiconductor barrier layers (24), into a disordered alloy by selective introduction of a disordering Zn, Si or As elements or ions into the multilayer structure. The disordered alloy exhibits wider energy band-gap while still retaining single crystallinity. The process is illustratively used to make Schottky barrier field effect transistor (fig. 5), light emitting diode (fig. 3-4) and intergrated electro-optical device (fig. 6).</p> |
