| 发明名称 |
METHOD OF PRODUCING SEMICONDUCTOR LAYER SOLARG BATTERY |
| 摘要 |
In this method, in which the semiconductor material is applied by means of plasma-spraying to a substrate, the energy density in the plasma zone is selected at such a high level that the semiconductor material vaporises. The semiconductor material is taken as a vapour jet out of the plasma zone and precipitated in the form of a semiconductor layer on a substrate. <IMAGE> |
| 申请公布号 |
JPS57183075(A) |
申请公布日期 |
1982.11.11 |
| 申请号 |
JP19820064108 |
申请日期 |
1982.04.19 |
| 申请人 |
LICENTIA PATENT VERWALTUNGS GMBH |
发明人 |
RAINHARUTO DAARUBERUKU |
| 分类号 |
H01L31/04;C23C4/10;C23C14/32;C23C16/513;H01L21/205;H01L31/052;H01L31/054;H01L31/062;H01L31/18 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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