| 摘要 |
PURPOSE:To prevent reduction of brightness of red color luminescence even when a P type GaP substrate is used when P type layers and N type layers are to be made to grow liquid phase epitaxially on the P type substrate by a method wherein oxygen is added in a molten liquid for N type layer growth. CONSTITUTION:The P type layer 12 is made to grow liquid phase epitaxially on the GaP substrate 11, and the N type layer 13 is made to grow liquid phase epitaxially thereon using the molten liquid obtained by throwing Ga2O3 into the Ga molten liquid added with S. After then, the N type layer 14, the P type layer 15 are made to grow respectively liquid phase epitaxially thereon. Because brightness of red color of the LED manufactured by this way is not reduced by the addition of oxygen, a green color luminescent layer is laminated after then, and the LED to emit from red color up to green color being not mixed with red color can be manufactured. |
