| 摘要 |
PURPOSE:To form vapor phase epitaxial growth layers of semiconductor efficiently and without deteriorating quality thereof by a method wherein a large quantity of wafers are processed automatically and continuously without partitioning theI- the IV regions in a reaction tube with partitions. CONSTITUTION:After a susceptor 3 and the wafers 4 are replaced in an inert atmosphere formed by N2 gas blown out from an inlet port 111 in theIregion, they are heated at 500-600 deg.C by a preliminary heat coil 13. Then the susceptor 3, etc., are transferred into the II region, N2 gas is supplied from a carrier gas inlet port 141, SiH4 gas is supplied from a reaction gas inlet port 142, and polycrystalline Si layers are pilled up on the wafers 4. Then the decomposed products are replaced in an N2 gas atmosphere formed by N2 gas blown out from an inlet port 161 in the III region. Then a laser beam 21 is irradiated on the polycrystalline si layers pilled up on the wafers in the IV region, and accordingly the whole of the polycrystalline Si layers are made to regrow into single crystals making the single crystals of the wafers as the crystal nuclei. Then the susceptor 3, etc., are taken out outside of the reaction tube from an outlet port 102. |
