| 摘要 |
PURPOSE:To improve protecting effect against impulsive surge, by bettering high-speed response with a Schottkey junction diode and absorbing a great amount of current with a parallel P-N junction diode, when a protection diode is added to an IC to take surge measures. CONSTITUTION:N type layers 302, 306 are formed by diffusion on a P type semiconductor substrate 301. P type regions 304, 305, and an N<+> type region 303 higher in impurity density than the layer 302 is provided in the layer 302. A P type region 307, an N type region 312 existing herein, and an N<+> type region 309 higher in impurity concentration than the layer 306 are formed also in the layer 306. Next, the whole surface is covered with an insulating film 313 and a window is opened. Terminals of power supply 310, input 311 and output 312 are attached to the regions 303, 304 and 308 respectively. Consequently, the P-N junction protection diode, Schottkey junction and transistor are composed of the region 304 and layer 302, the layer 302 and terminal 311, and the regions 306, 307 and 308 respectively. |
