| 摘要 |
PURPOSE:To reduce the space for connection by a method wherein, when the first and the second polycrystalline Si layers with the different conductive types come into contact with each other to be connected, a metal is placed on this connection to be heat-treated so that said Si layers may be connected with each other through the intermediary of the spike of the metal infiltrated into said Si layers. CONSTITUTION:When the polycrystalline Si wirings 31 and 32 come into contact with each other to be connected, the ohmic connection is obstructed by the resultant PN joint, therefore a metal such as Al placed on the connection is heat-treated at 300-500 deg.C making Al infiltrate into the ends of the wirings 31 and 32 to make the ends conductive through the intermediary of the resultant spike of Al. Through these procedures, the integration of IC and the like may be improved by means of the direct ohmic connection between the polycrystalline Si wirings with the different conductive types. |
