Logic structure utilizing polycrystalline silicon Schottky diode.

摘要

An integrated circuit structure and process for fabricating it are described which allow fabrication of a very compact high-speed logic gate. The structure utilizes a bipolar transistor formed in an epitaxial silicon pocket surrounded by silicon dioxide. A pair of Schottky diodes and a resistor are formed outside the epitaxial pocket on the silicon dioxide and connected to the pocket by doped polycrystalline silicon.