发明名称 |
Silicon carbide electrical insulator material of low dielectric constant and manufacturing method therefor. |
摘要 |
<p>A silicon carbide electrical insulator material of low dielectric constant comprising an electrically insulating sintered body containing silicon carbide as a main constituent and an element providing electrical insulating properties in sintered state, wherein the sintered body comprises an element selected from V family in the periodic table and the carrier concentration within the crystal grain of silicon carbide is 5 x 10'7 cm-3 or less.</p> |
申请公布号 |
EP0064386(A2) |
申请公布日期 |
1982.11.10 |
申请号 |
EP19820302184 |
申请日期 |
1982.04.28 |
申请人 |
HITACHI, LTD. |
发明人 |
MAEDA, KUNIHIRO;MIYOSHI, TADAHIKO |
分类号 |
C04B35/565;H01B3/02;H01B3/12;H01L23/15;H01L23/34;H05K1/03;(IPC1-7):04B35/56;01B3/12;01L23/14 |
主分类号 |
C04B35/565 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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