发明名称 Silicon carbide electrical insulator material of low dielectric constant and manufacturing method therefor.
摘要 <p>A silicon carbide electrical insulator material of low dielectric constant comprising an electrically insulating sintered body containing silicon carbide as a main constituent and an element providing electrical insulating properties in sintered state, wherein the sintered body comprises an element selected from V family in the periodic table and the carrier concentration within the crystal grain of silicon carbide is 5 x 10'7 cm-3 or less.</p>
申请公布号 EP0064386(A2) 申请公布日期 1982.11.10
申请号 EP19820302184 申请日期 1982.04.28
申请人 HITACHI, LTD. 发明人 MAEDA, KUNIHIRO;MIYOSHI, TADAHIKO
分类号 C04B35/565;H01B3/02;H01B3/12;H01L23/15;H01L23/34;H05K1/03;(IPC1-7):04B35/56;01B3/12;01L23/14 主分类号 C04B35/565
代理机构 代理人
主权项
地址