| 摘要 |
A plasma reaction device having a cylindrical reaction chamber connectable to a gas source for receiving internally thereof a working gas for treating workpieces, such as semiconductor wafers, therein with the working gas. An exterior electrode is mounted exteriorly of and about the working chamber and an interior electrode is disposed in the reaction chamber spaced inwardly from the inner surfaces thereof. A high frequency voltage source is connected across the two electrodes for applying a high frequency voltage to the electrodes to excite the working gas and develop a plasma in a space between the electrodes. The interior electrode has a plurality of plasma-diffusion through-holes arranged and dimensioned to effectively obtain a substantially uniform concentration of the plasma on a surface of the workpiece exposed to the interior of the reaction chamber and therefore exposed to the working gap plasma. The plasma-diffusion through-holes are arranged and dimensioned so that an opening-to-surface ratio of the interior electrode in a portion thereof close to the workpiece surface being treated is relatively small. The interior electrode is constructed so that this ratio is relatively large on a portion of the interior electrode more remote from the surface of the workpiece being treated. The ratio is computed by dividing the total cross section area of the through-holes by the remainder of the total surface area of the interior electrode less the total cross section area of the through-holes in terms of a unit area of the interior electrode.
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