发明名称 End point detection method for physical etching process
摘要 A method for determining the end point for a physical etching process step measures the current at the target being etched and detects changes in the current. Changes in the current measured at the target are indicative of transitions between dissimilar materials or of depth of penetration in a particular material. Momentary changes in the etching flux of the physical etching process are factored out by measuring the current on a mask placed in the vicinity of the target and by subtracting mask current from current measured at the target.
申请公布号 US4358338(A) 申请公布日期 1982.11.09
申请号 US19800150533 申请日期 1980.05.16
申请人 VARIAN ASSOCIATES, INC. 发明人 DOWNEY, DANIEL F.;LECOURAS, GEORGE T.
分类号 C23F4/00;G01N27/20;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01L21/30;C23F1/00 主分类号 C23F4/00
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