| 摘要 |
PURPOSE:To project light patterns only when the reaction on a substrate is selected by disposing a mask constituting a pattern shape in the optical path from a pulse light source, and providing pattern information to the light pulse beam. CONSTITUTION:The laser light from a large diameter pulse laser light source 1 is passed through a light pipe 2 and is made uniform, after which it is changed of direction with a mirror 3 and is irradiated to a mask 4. The pulse beam light past the mask is provided with two-dimensional pattern information by the two- dimensional distributions of transmittances of the mask surface. This light is passed through a projecting lens system 5, whereby the pattern of the mask is imaged on a wafer 6. The wafer 6 is supported precisely movably by a stage 8 on a sample table 7, and is adjusted that when the laser light falls onto the wafer mark 9 on the wafer 6 the intensity of the reflected light entering a detector 16 increases. |
