| 摘要 |
PURPOSE:To realize an element separation region divided finely in a simple process, by implanting ions through a selective etching film and an insulation film underneath, and forming a reverse protection layer and an element region opening mask simultaneously. CONSTITUTION:Ions of boron are implanted in a near boundary under an insulation layer 12 masked by a resist pattern 14 on the insulation layer 12 and an Al film 13 formed on a semiconductor substrate 11. The Al film 13 has etching selectivity, and at the sane time, a reverse protection layer 15 is formed. Next, a mask 14 and the film 13 underneath are removed by etching. The insulation layer 12, masked by a remaining Al film 13', is etched. An element region is exposed around an element separation layer 16 consisting of insulation layer. Electrodes of source 19, drain 20 and gate 18 are formed afterwards by a conventional method. This attains high integration by forming a refined element separation region with no bird beak in a simplified process. |
