发明名称 GATE TURN OFF THYRISTOR
摘要 PURPOSE:To prevent current concentration, by providing current control layers which control base current transversely flowing between element units on the second base region placed between the second emitter layers divided into a plurality in GTO divided into a plurality of element units. CONSTITUTION:A P type first emitter layer 21, N type first base layer 22 and P type second base layer 23 are successively laminated. N type second emitter layers 241, 242... divided into a plurality in mesa shape are arranged on the second base layer 23 to constitute a plurality of element units. N type layers 281, 282... as current control layers to control base current in transverse direction on the second base layer 23 placed between the second emitter layers 24. Thus, current concentration into a specific element unit is prevented on turn off.
申请公布号 JPS57181163(A) 申请公布日期 1982.11.08
申请号 JP19810065952 申请日期 1981.04.30
申请人 TOKYO SHIBAURA DENKI KK 发明人 AZUMA MINORU
分类号 H01L29/744;H01L29/74;(IPC1-7):01L29/74 主分类号 H01L29/744
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