| 摘要 |
PURPOSE:To form a substance changing section corresponding to a desired pattern on a substrate by making energy beam itself possess necessary pattern information or pattern distribution. CONSTITUTION:An insulating film alpha2 made of SiO2 is shaped onto the Si substrate alpha1, and an amorphous Si film alpha3 is further deposited. Partial pulse laser annealing is conducted to the film 3. That is, the film alpha3 is changed into poly Si as a substance change through a melting reaction by giving energy beam itself the pattern information and irradiating the film alpha3, and a poly Si pattern is formed. An island alpha4 mde of poly Si is shaped according to the difference of the speed of etching through dry etching. Consequently, a process can be turned in a resistless dry process. |
