| 摘要 |
PURPOSE:To form an element separating region being micro-miniaturized by shaping a mask for an opening section by implanting ions to a selective etching film while forming an inversion preventive layer by implanting ions through the film and an insulating film. CONSTITUTION:The inversion preventive layer 15 is shaped by implanting boron, etc. into a semiconductor substrate 11 while using a resist pattern 14 as a mask from the upper section of an insulating layer 12 and an Al film, etc. 13 molded onto the substrate, and voltage is lowered and boron ions are inplanted in the Al film 13 and etching resisting property is produced. The mask 14 and the film 13 just under the mask are removed, the insulating layer 12 is etched employing the remaining Al film, etc. 13' as masks, an element forming region is opened onto the substrate in self-matching manner, and a source 19, a drain 20, a gate electrode 18, etc. are formed through a normal method. Accordingly, the micro-miniaturized element separating region with no bird-beak is shaped through a process being simplified, and the high degree of integration, etc. can be attained. |
