| 摘要 |
PURPOSE:To apply a three-layer composition to all lithographic processes of IC by a method wherein when the surface to be etched is an Si oxide film or an Si nitride film polycrystalline or amorphous Si is used as an intermediate layer. CONSTITUTION:An oxide film 102 is accumulated on an Si substrate 101 with a difference in level and an organic high molecular paint film 103 is formed on the oxide film 102. Then a polycrystal or amorphous Si film 104 and a resist film 105 are successively piled. Then, after the film 105 is patterned by lithographic method, the film 104 is etched using the patterned film 105 as a mask. After that, the film 103 is etched by reactive gas containing oxygen using the film 104 as a mask and the pattern of the film 103 with nearly vertical etched sides can be obtained. Then the film 102 is etched using the film 104 or the film 103 as a mask. With this constitution, the oxide film pattern which has the dimension l4 nearly the same as the designed dimension l0 can be formed. |
