| 摘要 |
PURPOSE:To form the three layered wiring improving the integration by a method wherein the diffusion wiring layer for connection is formed when the circular diffusion layer for protecting the inverse conductive type well is formed on the Si substrate. CONSTITUTION:The poly Si gate electrodes 4, 5 are provided on the N type substrate through the intermediary of the P type source 1 and the drain 2. These gate electrodes 4, 5 are lead to the other transistor region through the extended Si wiring layers 4a, 5a located under the lower layer of the Al wiring 7 through the intermediary of the insulating film of the substrate. The P type diffusion type wiring 22 between the P type drain 2 and the Al wiring 8 on the insulating film of the substrate is formed before the drain 2 is formed when the P type impurities are diffused in case the protective ring of the P well is formed. Through these procedures, the diffused layer 2 and the Al wiring 8 may be connected by the window 8 without fail because the diffused wiring 22 is not formed into the gate region even if said wiring 22 is overlapped with the poly Si wiring 5a. In such a constitution, the semiconductor device comprising the Si gate CMOSIC with high integration may be manufactured. |
