| 摘要 |
PURPOSE:To prevent the Al electrode from melting by a method wherein the PSG excluding the gate electrode is coated with Si3N4 to restrain the PSG from chemically reacting to the externally permeated water. CONSTITUTION:The Si substrate 1 wherein the source 2, the drain 3 and the channel stopper 4 are formed is provided with the SiO2 field insulating film 5, the gate insulating film 6 and covered with the PSG 7. Next, the overall surface is covered with Si3N4 while the gate oxide film 6 and the joint pad 11 are selectively removed. Then the overall surface is further covered with the Al film and provided with the Al electrodes 8-10, the pad 11 and the like and covered with the protective insulating film 12. In this constitution, the Al electrode is prevented from corrosion reducing the troubles remarkably. |
