| 摘要 |
PURPOSE:To detect an extent of the thermal treatment with wide operational region and large signal variation band by detecting acoustic wave generated along with beam radiation by an acoustic wave detection mechanism adhered to a part of a specimen. CONSTITUTION:A transducer 13 is pressed and adhered to a back of a wafer 3 by a jig and the surface of the wafer 3 is irradiated by a laser beam 1. The intensity of an acoustic wave signal detected by the transducer 13 is proportional to the power density of the laser beam but increases rapidly after the surface of the Si of the wafer 3 starts melting. After the molten state is reached, the intensity of the acoustic wave signal again becomes proportional to the power density of the laser beam. With this constitution, the extent of the thermal treatment can be detected by the acoustic wave. |
