| 摘要 |
PURPOSE:To completely suppress a demagnetizing field and to minimize the dead band of an MR element, by using a high electric resistance material for a demagnetizing field suppression magnetic substance film, directly connecting the MR element and the demagnetization suppressing film and minimizing an overlapped part of the two. CONSTITUTION:As a demagnetization field suppressing magnetic substance film (hereinafter suppressing film), NiZn ferrite is used, the upper ridge of an MR element 2 is direct contact with a lower end 8a of a suppressing film 8 with overlapping. The film 8 can be regarded as an insulation material. The thickness of the MR element is 0.05mum and the thickness of the film 8 is 0.15-1.0mum. Thus, the MR element is contact with the film 8, then the suppression of the demagnetizing field can completely be made. Since the width of overlapped part of both the films can be taken as <=1mum, the blind sector of the MR element can be minimized. The MR element is vapor-deposited on a base, a conductor films is vapor-deposited on it, and a pair of the element and film are formed left and right. Unnecessary parts of the MR element are removed by etching. |
