| 摘要 |
PURPOSE:To eliminate the mismatching of grating constant for the subject semiconductor device by a method wherein an oxide such as an equiaxial crystal group containing Co and its analogous element, or one which belongs to a square crystal group, or an oblique crystal group which is slightly deformed from the equiaxial crystal group is used as an insulating material. CONSTITUTION:A layer type structure is obtained by having the oxide which belongs to an equiaxial crystal group, containing Co and its analogous element, or one which belongs to a square crystal group or an oblique crystal group which is slightly deformed from the equaixial crystal group is used as an insulating material 3, and Si 1 and 4 are coupled to the above. At this time, the grating constant of the oxide is set at the ratio of 0.99-1.01 for the grating constant of the Si containing employed impurities. Accordingly, there exists no mismatching of grating constant, and a multilayer semiconductor device of high serviceability can be obtained without causing the characteristic deterioration in conductivity and the like. |
