| 摘要 |
PURPOSE:To permit low oxidation treatment temperatures by maintaing sputtering pressure within a range that the coercive force of a forming film is 90% or less of the maximum coercive force of the forming film locating within a range of sputtering pressure which forms an intermediate of Fe3O4 or the Fe3O4 and gamma-Fe2O3. CONSTITUTION:A ferromagnetic iron oxide continuous thin film composing an intermediate of Fe3O4 or gamma-Fe2O3 as a main component is formed on a flexible substrate by sputtering under the atmosphere of neutral gas or the atmosphere mixed the neutral gas and oxide gas. A ferromagnetic iron oxide continuous thin film composing an intermediate of gamma-Fe2O3 and Fe2O3 as a main component is formed by oxidizing the previous ferromagnetic iron oxide continuous thin film. At that time, film formation is performed by maintaining sputtering pressure within a range that the coercive force of the formed film under the sputtering pressure is 90% or less, preferably 70% or less of the maximum coercive force value of the forming film locating within a forming range of a ferromagnetic iron oxide continuous thin film composing an intermediate of Fe3O4 or Fe3O4 and gamma-Fe2O3 as a main component. |
