| 摘要 |
Selectively shaped silicon crystal bodies, such as plate-, tape- or film-shaped bodies, having crystalline pillarlike structures therein are produced as substantially porefree bodies by forming a slurry from an admixture of relatively fine sized silicon particles, optional additives and a liquid binder, extruding such slurry as a relatively thin layer onto a first support member, drying such extruded layer until it becomes self-supporting and removing such support member, applying a substantially uniform layer of a germanium powder onto a surface of such self-supporting layer and then sintering the resultant structure in a protective gas atmosphere at temperatures below about 1430 DEG C. until a layer of crystalline silicon particles is generated, which particles have an average diameter substantially corresponding to the thickness of the dried layer.
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