| 摘要 |
PURPOSE:To prevent the reaction of an electrode material and a semiconductor material, and to improve reliability by forming a silicon nitride film, a reflection preventive film and an opposite electrode, which is shaped selectively, onto a semiconductor substrate in integral structure. CONSTITUTION:The P type silicon substrate 1 is thermally nitrified in ammonia, and the silicon nitride film 5 is formed. The reflection preventive film 6 is shaped onto the film 5, a resist film 7 is further applied, and the resists of electrode forming regions 13 are removed. The silicon nitride film 5 of the back of the substrate is removed, and the electrode 8 is formed. The reflection preventive film 6 is removed selectively using the resist film 7 as a mask, and electrodes 10 are shaped by evaporating the electrode material onto the silicon nitride film 5 exposed under vacuum. The resist film 7 is removed, and the unnecessary electrode material 10<1> is lifted off. With the silicon nitride film 5, energy band width is small, and the thickness can be thickened (20-25Angstrom ). |
