<p>SOLID-STATE IMAGING DEVICE The invention relates to a solid-state imaging device having a plurality of photoelectric portions and a semiconductor substrate which includes scanning means for selecting the photosensitive portions in succession, the photoelectric portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent conductive film overlying the photoelectric material layer. The invention is characterized in that the photosensitive material of the solid-state imaging device is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, and especially 10 atomic-% to 25 atomic-%. Such an imaging device avoids the use of an electron beam and avoids many of the disadvantages of known solid-state imaging devices.</p>
