| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.
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| 申请公布号 |
US7307292(B2) |
申请公布日期 |
2007.12.11 |
| 申请号 |
US20030456901 |
申请日期 |
2003.06.09 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NISHII KATSUNORI;INOUE KAORU;MATSUNO TOSHINOBU;IKEDA YOSHITO;MASATO HIROYUKI |
| 分类号 |
H01L31/0336;H01L21/335;H01L29/20;H01L29/778 |
主分类号 |
H01L31/0336 |
| 代理机构 |
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