| 摘要 |
PURPOSE:To suppress the variation of junction capacitance generating when a junction work is performed by a method wherein a metal electrode isolated from a pad is formed in the prescribed width on the insulating film located in the vicinity of the circumference of the junction pad of a semiconductor substrate. CONSTITUTION:A CVD oxide film 7 is superposed on the insulating film 6 of an Si substrate 5 whereon an element region was formed, and electrodes 8 and 9 of Al and the like are selectively formed, isolating from the substrate 5, on the circumference of the expected location of the junction pad. As for the shape of the electrodes 8 and 9, the width and the length are determined by calculating on the basis of the controlling limit of positional deviation, the thickness of insulting fims 6 and 7 and the area of the pad 2. Then, holes 1' and 2' are formed on the insulating film 7 located above the pad, they are connected with a junction wire 10 and the device is completed. According to this constitution, the pad can be designed in the width below the coolapsed width of a wire, no step-disconnection is generated without thickening the insulating film located under the pad, the variation of parasitic capacitance generated by the collapsed when the junction work is performed, the positional deviation and the like can be suppressed, and the frequency characteristics can also be improved. |
