| 摘要 |
PURPOSE:To reduce parasitic resistance or enhance mutual conductance for an FET with good high frequency characteristic, by forming a short operating layer of a gate layer, deep operating layer between a gate source and operating layer between a gate drain by ion implantation method. CONSTITUTION:On the surface of a semiconductor substrate 1 which has high resistivity or semi-insulation character, one conductive semiconductive layer 16 is epitaxial-grown in a liquid or vapor phase with the thickness and carrier density specified for desired pinch-off voltage. Next, an injection mask 17 constituted of a stripe-shaped photoresist is provided on the center of the surface thereof to deeply implant impurity ion of the same conductive type as the layer 16 for the formation of an operating layers 12 and 13 at deep positions. Thereafter, Al metallic films 18 and 20 are adhered on the layer 16 including the operating layers 12 and 13 with the mask 17 existing to remove the mask 17 together with the Al meatallic film 19 adhered thereon. Subsequently, inverse conductive type ion is shallowly implanted from oblique direction into the exposed layer 16, i.e. the main operating layer 11 to form a gate region 21. |
