| 摘要 |
PURPOSE:To selectively remove SiO2 by a method wherein, before performing a dry-type etching, a region containing a large quantity of both H and C, or one of them, is formed in the vicinity of the interface of Si and the SiO2 to be formed on the Si. CONSTITUTION:A resist mask 4 is provided on the SiO2 film 2 located on an Si substrate 1, an ion is implanted from the window 4a provided on the mask 4, and a layer 3 containing a large quantity of H is formed on the interface between the film 2 and the Si substrate 1. Then, in a paralleled flat-plate type device, when a plasma etching is performed using CF4, for example, the region 3 of the window 4a section is selectively removed completely, the ending point of the etching can be detected by the luminescent spectrum sent from plasma, and when the mask 4 is removed, the SiO2 of desired pattern remains, and moreover, the H is not contained in the SiO2 2. According to this constitution, a stabilized dry-type etching can be performed, reproducibility is excellent, and the etching speed for the SiO2 is increased, thereby enabling to improve workability. |
