发明名称 LIGHT EMITTING DIODE HAVING MULTIPLE ACTIVE LAYERS AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor light emitting device having multiple active layers and a manufacturing method thereof are provided to prevent rapid saturation of an output light due to injection current by enlarging an area of the active layer twice. A light emitting layer having plural active layers is deposited on a substrate(10). The light emitting layer is formed by depositing plural light emitting diode modules(20) each having the active layer, in which adjacent semiconductor layers(21,23) have the same shape. The semiconductor layer has a metal electrode layer(40) to allow an electric current to flow through each semiconductor layer. An insulating layer(30) is formed between a side of the metal electrode layer and a side of the light emitting layer to restrict inflow of the current into the light emitting layer from the side of the metal electrode layer.
申请公布号 KR20080018492(A) 申请公布日期 2008.02.28
申请号 KR20060080690 申请日期 2006.08.24
申请人 KOREA PHOTONICS TECHNOLOGY INSTITUTE 发明人 LEE, JIN HONG;KIM, KANG HO;OH, HWA SEOP;LEE, SEUNG JAE;BAEK, JONG HYEOB;YU, YOUNG MOON;KIM, SANG MOOK;LEE, SANG HERN;KIM, YOON SEOK;JHIN, JUNG KEUN;YOM, HONG SEO
分类号 H01L33/06 主分类号 H01L33/06
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