| 摘要 |
PURPOSE:To enable high-speed operation with low supply voltage by constituting a titled circuit of the first and second MOSFET for loading, an MOSFET for driving and a capacity element. CONSTITUTION:The drain and gate of the first MOSFETQ1 for loading and the drain of the second MOSFETQ2 for loading are connected to a high level power source E0. The source of the FETQ1 and the gate of the FETQ2 is connected in common and connected to one end of a capacity element C and an output terminal E1. Another end of the element C is connected to the source of the FETQ2 and the drain of an MOSFETQ3 for driving. The source of the FETQ3 is connected to a grounding terminal and pulse signals phi are given repeatedly to the gate terminal P of the FETQ3. When the FETQ3 is on-state, charge current flows to the element C and voltage between terminals of the element C becomes Ec. When the Q3 is turned off, the FETQ2 raises the potential of the low potential terminal of the element C and gives voltage source of Ec+E0 to the terminal E1. Discharge current is supplied from the element C to the load and high-speed operation is enabled to voltage exceeding power source voltage. |
