| 摘要 |
PURPOSE:To obtain a semiconductor laser device wherein laser oscillation is performed up to high optical output power in a fundamental lateral mode, by providing first and second current limiting layers in a P region and an N region, and squeezing the flowing current between said current limiting layer. CONSTITUTION:Current limiting layers are alternately provided on both sides of P-N junction, and a large contacting area is provided between a P electrode and a P type cap layer. That is, a P type part 9 is formed in an N type substrate 10, and an N type clad layer 11, an active layer 12, a P type clad layer 13, an N type cap layer 14, and a P type cap layer 15 are formed on the substrate 10. Then a P type electrode 16 and an N type electrode 17 are formed. The spread of the current is limited by the N type cap layer 14 and the P type part 9. By reducing the distance between them, the spread of the current can be reduced without reducing the contact area of the P type cap layer 15 and the P electrode 16. |
