| 摘要 |
PURPOSE:To implement a high speed operation with a high yield rate and high reliability, in a bipolar transistor with a Schottky barrier diode, by providing a wiring metal film through a film which prevents the reaction between metal silicide and wiring metal. CONSTITUTION:An SiO2 film 14 is provided on a P type base region 12 in an N type Si region 11. An Al electrode 18 is provided on a platinum silicide film 16 at the part of Schottky barrier diode (SBD) through a film 17 comprising Ti and W which prevents the reaction with the platinum silicide. Meanwhile, a polysilicon film 15 including high impurity garium is provided on an N<+> type emitter region 13. An Al electrode 18 is provided thereon through a film 17 comprising Ti and W. Thus a fine pattern, which is operated at a high speed, and multilayer wiring can be provided. |
