| 摘要 |
PURPOSE:To omit baking and plasma ashing steps after a development by interposing a pretreating step of alcohol substituting method between a resist developing step and a pattern forming step. CONSTITUTION:A resist film is covered on a material to be formed in a pattern of a semiconductor device, an electron beam or X-ray is emitted to expose the film, the film is developed, is then rinsed with isopropyl alcohol for approx. 20sec., is then purged with nitrogen gas, the isopropyl alcohol is substituted for approx. 10sec, the film is then dipped in an etchant, and a selective pattern is formed on the material to be formed in a pattern of the semiconductor device with the film formed on the pattern as a mask. Since the isopropyl alcohol is readily draped with etchant, the etchant is preferably contacted with the material to be formed in a pattern, and no deformation of a side effect of plasma ashing takes place. |
