| 摘要 |
PURPOSE:To prevent the erroneous operation of a circuit operation by covering a P-N junction of at least a part of a circuit element forming an oscillator in a semiconductor integrated circuit device with a light shielding layer. CONSTITUTION:An oscillator having a resistor RD made of P<+> type diffused layer 12, a capacitor C3 formed of a well 18, an oxidized film 15 and a polysilicon layer 19 and MIS type FET Q1-Q4 is formed on a semiconductor substrate 10, and a light shielding film 9 of aluminum or the like is formed to cover the P-N junction of at least a part of the circuit elements. In this manner, the leakage current (leakage resistance) of the P-N junction is prevented due to the incident light, thereby preventing the erroneous operation of the circuit. |
