<p>A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Fluorine is removed from the conformal layer, while the remaining conformal layer is left in place. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.</p>
申请公布号
WO2008045764(A1)
申请公布日期
2008.04.17
申请号
WO2007US80455
申请日期
2007.10.04
申请人
LAM RESEARCH CORPORATION;HEO, DONGHO;KIM, JISOO;SADJADI, S.M. REZA