| 摘要 |
PURPOSE:To form a microscopic high-precision mask pattern in high fidelity to a resist pattern, by processing the face to be etched between a developing step and a wet etching step with an organic amine or an organic ammonium salt solution. CONSTITUTION:A radiation sensitive resist film on the material to be etched is subjected to patterning and developing processing to form a resist pattern. Uniform etching can be executed, uneffected by a scum layer remaining on the surface of the material to be etched, by processing with an organic amine, such as triethanolamine or isopropanolamine, or with an organic ammonium salt solution, such as ethanoltrimethylammonium hydroxide. |
